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 | MSM 2000
Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Chapter 2: Process Modeling |
| | Two-Dimensional Simulation of Scanning Capacitance Microscopy Measurements of Arbitrary Doping Profiles | | Authors: | L. Ciampolini, M. Ciappa, P. Malberti and W. Fichtner | | Affilation: | Swiss Federal Institute of Technology, Switzerland | | Pages: | 48 - 51 | | Keywords: | scanning capacitance microscopy, 2D carrier profiling, device simulation, ultrashallow junctions | | Abstract: | Accurate prediction of doping distributions in modern VLSI devices (e.g. shallow junctions) with TCAD tools represents a major challenge which requires the process simulation models to be accurately tuned on the basis of two-dimensional dopant profile measurements. Scanning capacitance microscopy is a scanning probe based technique which provides images with spatial resolution in the 10 nm range. The extraction of quantitative doping information from the raw experimental data requires a calibration procedure. Presently, most of the results are obtained either with a large reverse simulation effort or with a first-order data inversion procedure (direct inversion). The current assumption of the latter approach is thequasi-uniformity ofthe doping profile. The scope of the present paper is to investigate the limits of this simplified approach by two-dimensional simulations of SCM measurements. |  | View paper | | ISBN: | 0-9666135-7-0 |
| Pages: | 741 |
| Hardcopy: | $100.00 |
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