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 | Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Chapter 12: Molecular and Nanoelectronics |
| | First-principles Study of Electron Transport through Atomistic Metal-Oxide-Semiconductor Structures | | Authors: | X. Zhang, L.R.C. Fonseca and A.A. Demkov | | Affilation: | Motorola Inc., USA | | Pages: | 322 - 325 | | Keywords: | electron transport, scattering theory, density functional, aluminum, device physics, CMOS leakage | | Abstract: | We describe a theoretical scheme to combine first-principles molecular dynamics simulation and non-perturbative scattering theory for transport calculations. We compare our approach with published results for electron transport through a single Al atom. The method is then applied to the Si/SiO2/Si MOS structure, where we analyze the correspondence between the localized defect states and the leakage current. For a 1.04 nm thick MOS structure we calculate a leakage current of 33 A/cm2, in excellent agreement with a measured value of 19 A/cm2. |  | View paper | | ISBN: | 0-9708275-6-3 |
| Pages: | 504 |
| Hardcopy: | $100.00 |
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