Nano Science and Technology Institute - NSTI  
Nano Science and Technology Institute   Home | Subscribe | Site Map  
  ABOUT | COURSES | EVENTS | PUBLICATIONS | LEADERSHIP | OUTREACH | NEWS | PRESS | JOBS | Nanotechnology Solutions
px
px fade_top
Publications
Nanotech 2008 CDROM
Nanotech 2007 CDROM
Nanotech 2006 CDROM
Nanotech 2005 CDROM
Nanotech 2004 CDROM
3 CDROM Special Offer
Nanotech 2008 Vol. 1
Nanotech 2008 Vol. 2
Nanotech 2008 Vol. 3
Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 2
Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 4
Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 2
Nanotech 2006 Vol. 3
Nanotech 2005 Vol. 1
Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 3
WCM 2005
Nanotech 2004 Vol. 1
Nanotech 2004 Vol. 2
Nanotech 2004 Vol. 3
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 3
Nanotech 2002 Vol. 1
Nanotech 2002 Vol. 2
Nanotech 2001 Vol. 1
Nanotech 2001 Vol. 2
MSM 2000
MSM 99
MSM 98
Index of Authors
Index of Keywords
Index of Affiliations
Library Request Form
Shopping Cart
Order Form
 
Publications Publications
Nanotech 2002 Vol. 2
p
 
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
Nanotech 2002 Vol. 2
Technical Proceedings of the 2002 International Conference on Computational Nanoscience and Nanotechnology
 
Chapter 11: Mechanical Properties at the Nanoscale
 

Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum Dots

Authors:L.H. Friedman, D.M. Weygand and E. van der Giessen
Affilation:University of Groningen, The Netherlands
Pages:271 - 274
Keywords:dislocations, modelling, stress-concentration, quantum dots, self-assembly
Abstract:Growth islands due to large mismatch strain arising in Stranski-Krastanow (SK) and Volmer-Weber (VW) lm growth can be used to produce large arrays of quantum dots. This same mismatch strain may also cause mis t dislocations to form, presenting a quality control problem.Johnson and Freund (J. Appl.Ph ys.81 (9), 1997, p6081) developed a two-dimensional model of mis- t dislocation nucleation in SK and VW growth islands whereby they predict a power-law relation between mis- t strain, em, and the minimum island size to nucleate a mis t dislocation, Rc: Rc, where l < 1 is a function of the island-substrate contact angle. This problem is treated here in three dimensions as an application of a numerical dislocation simulation using the nite element method to take proper boundary conditions into account. The predictions are analyzed in the context of the Johnson–Freund model, and modi cation of the power-law is shown to be necessary.
Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum DotsView paper
ISBN:0-9708275-6-3
Pages:504
Hardcopy:$100.00
Special:3 CD Set — 15% off with Free Shipping
Up
nanoPRwire™
nanoPRwire
News Headlines
nano World news
 
 
 
 
px
© Nano Science and Technology Institute     About NSTI | Terms of Use | Privacy Policy | Contact