Authors: W. Windl, X-Y. Liu and M.P. Masquelier
Affilation: Motorola, United States
Pages: 112 - 116
Keywords: ab initio, boron clustering, deactivation, multi-scale process modeling
We present results of ab initio calculations for the structure and energetic of boron-interstitial clusters in Si and a respective continuum model for the nucleation, growth, and dissolution of such clusters. The structure of the clusters and their possible relationship to boron precipitates and interstitial-cluster formation are discussed. Our continuum model suggests that inclusion of the fractional activation of charged clusters into the overall carrier count can make a substantial difference, if a sample contains a large fraction of B clustered in B3I- clusters, which might present a way to probe these clusters experimentally.