Authors: H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
Affilation: Univ. of Texas Austin, United States
Pages: 108 - 111
Keywords: Boron, diffusion, activation, shallow junction, ab initio calculation
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.