Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology

Atomic and Nanoscale Modeling Chapter 5

Boron Diffusion and Activation in Silicon in the Presence of Other Species

Authors: H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee

Affilation: Univ. of Texas Austin, United States

Pages: 108 - 111

Keywords: Boron, diffusion, activation, shallow junction, ab initio calculation

Abstract:
Modeling and experimental investigation of B equilibrium diffusivity and its activation in Si in the presence of other species, including ab initio calculations, are presented here. The results suggest that incorporating other species along with B into the Si substrate can achieve shallower junctions and higher B activation in semiconductor device applications.


ISBN: 0-9708275-3-9
Pages: 218

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