Daw M.S., Windl W., Laudon M.
Clemson University, US
Keywords: Defects, diffusion, pressure effects
We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P.H. Dederichs and K. Schroeder, Phys. Rev. B 17, 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to Jahn-Teller distorted vacancies in Si, which we predict to show isotropic diffusion for (100) grown uniaxially strained films, but strong anisotropic diffusion for (111) films.
Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology
Published: March 19, 2001
Pages: 96 - 99
Industry sector: Advanced Materials & Manufacturing
Topic: Informatics, Modeling & Simulation
ISBN: 0-9708275-3-9