Nano Science and Technology Institute
Nanotech 2001 Vol. 2
Nanotech 2001 Vol. 2
Technical Proceedings of the 2001 International Conference on Computational Nanoscience and Nanotechnology

Chapter 5:

Atomic and Nanoscale Modeling

-Effect of Stress on Dopant Diffusion in Si
 M.S. Daw, W. Windl and M. Laudon
 Clemson University, US
-Atomistic Modeling of Arsenic Diffusion and Activation
 S. Dunham, P. Fastenko, Z. Qin and G. Henkelman
 University of Washington, US
-Theoretical Investigations of Diffusion and Clustering in Semiconductors
 B.P. Uberuaga, G. Henkelman, H. Jonsson, S.T. Dunham and W. Windl
 Los Alamos National Lab, US
-Boron Diffusion and Activation in Silicon in the Presence of Other Species
 H-J. Li, P. Kohli, S. Ganguly, T.A. Kirichenko, P. Zeitzoff, K. Torres and S. Banerjee
 Univ. of Texas Austin, US
-Ab Initio Modeling of Boron Clustering in Silicon
 W. Windl, X-Y. Liu and M.P. Masquelier
 Motorola, US
-Thermodynamic Processes of Si-interstitial Clusters
 J. Kim, S. Birner, D.A. Richie, J.W. Wilkins, A.F. Voter
 Ohio State University, US
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