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> Featured Compact Modeling Paper

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond
M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki and H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto, R. Inagaki and Y. Furui, Hiroshima University, JP

keywords: MOSFET, surface potential, 45nm technology, compact model

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ANNUAL INFORMATION UPDATE

In accordance with the requirements of Prospectus Rule 5.2, JSC SITRONICS (“Sitronics” or “The Company”) , a leading provider of telecommunications, IT and microelectronic solutions in Russia and the CIS, with a growing presence in other EEMEA emerging markets, submits its Annual Information Update, which refers to information that has been published or made available to the public over the twelve months ended May 14, 2008.

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