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Affiliation
Paper title
Nanyang Technological University
New Properties and New Challenges in MOS Compa...
 
Gummel Symmetry with Higher-order Derivatives ...
 
Viscous Dissipation Effects For Liquid Flow In...
 
Unified Compact Model for Generic Double-Gate ...
 
Nonequilibrium molecular dynamics simulation f...
 
Compact Modeling of Doped Symmetric DG MOSFETs...
 
Unified Approach to Bulk/SOI/UTB/s-DG MOSFET C...
 
Instability in flatband votlage of SiO2 embedd...
Nanyang Technology University
Threshold-Voltage-Based Regional Modeling of M...
 
Physics-Based Scalable Threshold-Voltage Model...
 
Physics-Based Scalable Threshold-Voltage Model...
 
Threshold-Voltage-Based Regional Modeling of M...
Naruto University of Education
Implementation of Strain Induced Effects in Se...
 
Simulation for Low Temperature Coefficient Des...
 
MEMS Simulation in Heavily Doped Silicon Devic...
 
Strain Effect on the Final State Density-of-St...
 
Simulation for Low Temperature Coefficient Des...
 
Implementation of Strain Induced Effects in Se...
 
MEMS Simulation in Heavily Doped Silicon Devic...
 
Strain Effect on the Final State Density-of-St...
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