Growth and Microstructure of Si Core/Ge Shell Nanowires
J-S Park, L. Cao, M.L. Brongersma, W-K Seong, B.M. Clemens
Stanford University, US
Keywords: Si core/Ge shell, heterostructure, nanowire, growth, VLS
Abstract:Si core/Ge shell heterostructure nanowires (NWs) were successfully grown and their microstructures were characterized. Crystalline Si NW cores were grown by the vapor-liquid-solid (VLS) mechanism using Au catalysts on quartz and Si (100) p-type substrates at 485 degree C. Following the Si NW growth, the temperature was lowered to solidify the Au catalyst and thus limit further NW growth during CVD growth of the Ge shell. Amorphous Ge was deposited onto the Si NW core at temperatures of 230 degree C and 240 degree C. The microstructure of the Si core/Ge shell NWs was characterized by SEM, TEM, and EDS.