2007 NSTI Nanotechnology Conference and Trade Show - Nanotech 2007 - 10th Annual
Technical Conferences
Nano Electronics & Photonics
Nano Fabrication
MEMS & NEMS
Sensors & Systems
Micro & Nano Fluidics
MSM - Modeling Microsystems
WCM - Compact Modeling
Nanostructured Materials & Devices
Soft Nanotechnologies & Applications
Nanoparticles in Soft Materials - Colloidal Systems
Polymer Nanotechnology
Carbon Nano Structures & Devices
Nano Particles & Applications
Composites & Interfaces
Energy Technologies & Applications
Nanotech in Health, Environment & Society
ICCN - Nanoscale Modeling
Nanoscale Characterization
Homeland Security
Bio Nano Materials & Tissues
Bio Sensors & Diagnostics
Biomarkers & Nanoparticles
Cancer Diagnostics, Imaging & Treatment
Drug Delivery & Therapeutics
Nano Medicine
Nanotech to Neurology
TechConnect Summit - IP Matchmaking
Cleantech 2007
Industrial Impact Workshop
Program Committee

10th International Conference on

Modeling and Simulation of Microsystems

MSM 2007

May 20 - 24, 2007
Santa Clara Convention Center
Silicon Valley, California, U.S.A

An Interdisciplinary Integrative Forum on
Modeling, Simulation and Scientific Computing in the MEMS, Microelectronic,
Semiconductor, Sensors, Materials and Biotechnology fields.

MSM - Modeling Microsystems
Program Announcement Topics Organization Events

Symposium Sessions

 

Monday May 21

7:00 Registration
8:30 Nanotech Conference Opening & Keynotes
10:30 Sensors & MEMS
1:30 MEMS/NEMS: Devices, Fabrication & Characterization
4:00 MEMS/NEMS: Chemical & Gas Sensors
4:00 MEMS/NEMS: Modeling & Characterization
 

Tuesday May 22

7:00 TUESDAY - Registration
10:30 WCM: Bulk MOS intrinsic/interface models
1:30 MEMS/NEMS: Simulation & Co-Simulation
4:00 WCM: Double/multiple-gate MOS models
4:00 Poster Session 1 (4:00 - 6:00) & Expo Reception
 

Wednesday May 23

8:30 Keynotes: Micro & Nano Fluidics - Sponsored by Kodak
8:30 WCM: Atomic/numerical-based models
10:30 Micro & Nano Fluidics: Nano Fluidic Devices - Sponsored by Kodak
10:30 WCM: Statistical/process-based models
1:30 WCM: SOI/double-gate/high-voltage models
2:00 Nanotech Poster Session 2 - Expo Reception (2:00 - 4:00)
4:00 WCM : Poster Briefing 1
5:10 WCM : Poster Briefing 2
 

Thursday May 24

8:00 WCM: Special Overview
8:30 WCM: Interconnect/parasitic/process models
10:30 Micro & Nano Fluidics: Design & Simulation
10:30 ICCN: Softnano: Multi-scale Modeling of Soft Nanostructured Materials
10:30 WCM: FET/HBT models
1:30 Micro & Nano Fluidics: Devices 1
1:30 ICCN: Modeling Zeolites, Surfaces and Surface Processes
2:10 ICCN: Softnano: Multi-scale Modeling of Soft Nanostructured Materials
 

Symposium Program

 

Monday May 21

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7:00 RegistrationMain Lobby
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8:30 Nanotech Conference Opening & KeynotesGrand Ballroom
 Session chair: Bart Romanowicz, NSTI, Andreas Wild, Freescale Semiconductors
8:30 How the US Can Ensure Energy Supply for the Future
J. Hofmeister, Shell Oil, US (bio)
9:10 National Nanotech Initiative and Industrial Nanotechnology Impact
A.H. Carim, Co-Chair, Nanoscale Science and Engineering Technology, Subcommittee, National Science & Technology Council, U.S. Department of Energy, US (bio)
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10:30 Sensors & MEMSGreat America 3
 Session chair: Elena Gaura, Coventry University, UK
10:30 Healthcare for the healthy people: miniaturization, sensing and actuation trend and needs in preventive and predictive medicine
A. Sanna, R. Serafin and M. Nalin, e-Services for Life and Health, Scientific Institute H. San Raffaele, Milan, IT (bio)
11:00 Collaborative Smart Objects and Augmented Materials
K. Delaney, Cork Institute of Technology, IE (bio)
11:30 Global Environmental Micro Sensors Test Operations in the Natural Environment
M.L. Adams, J. Manobianco, M. Buza and F.J. Merceret, ENSCO, Inc., US (bio)
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1:30 MEMS/NEMS: Devices, Fabrication & CharacterizationGrand Ballroom E
 Session chair: Chris Menzel, Spectra, US
1:30 Fabrication of a Real-Time Reactive Ion Etching Resonant Sensor Using a Low Temperature Sacrificial Polymer
B.G. Morris, P.J. Joseph and G.S. May, Georgia Institute of Technology, US
1:50 Characterization of An Integrated 3-Axis CMOS-MEMS Accelerometer
H. Qu, D. Fang and H. Xie, Oakland University, US
2:10 Piezoresistive effect in DLC Films
A. Tibrewala, A. Phataralaoha, E. Peiner, R. Bandorf and S. Büttgenbach, TU Braunschweig, DE
2:30 Comparison of Piezoelectric MEMS Mechanical Vibration Energy Scavengers
M. Marzencki, S. Basrour, B. Belgacem, P. Muralt and M. Colin, TIMA Laboratory, FR
2:50 Experimental results for a parametrically excited micro-ring resonator
K.M. Harish, B.J. Gallacher, J.S. Burdess and J.A. Neasham, University of Newcastle upon Tyne, UK
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4:00 MEMS/NEMS: Chemical & Gas SensorsGrand Ballroom E
 Session chair: Xavier Avula, Washington University, US
4:00 Gas fingerprinting using Carbon Nanotubes transistors arrays
P. Bondavalli, P. Legagneux and D. Pribat, THALES, FR
4:20 Manufacturable, Highly Responsive Nanowire Mercury Sensors
S. Keebaugh, W.J. Nam and S.J. Fonash, The Pennsylvania State University, US
4:40 A compact, low-power cantilever-based sensor array for chemical detection
A. Loui, T.V. Ratto, T.S. Wilson, E.V. Mukerjee, Z-Y Hu, T.A. Sulchek and B.R. Hart, Lawrence Livermore National Laboratory, US
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4:00 MEMS/NEMS: Modeling & CharacterizationGrand Ballroom G
 Session chair: Elena Gaura, Coventry University, UK
4:00 The mechanical stiffness and the size effect of the silicon based nano-structures using molecular dynamic (MD) simulation
C.A. Yuan, O. van der Sluis, G.Q. Zhang, L.J. Ernst, W.D. van Driel and R.B.R. van Silfhout, Delft University of Technology, NL
4:20 Investigation of Vector Discretization Schemes for Box Volume Methods
O. Triebl and T. Grasser, Christian Doppler Laboratory for TCAD in Microelectronics, AT
4:40 A Compact Scalable Circuit Model for RF MEMS Switches
H.M.R. Suy, H.G.A. Huizing, P.G. Steeneken and O.I. Yanson, NXP Semiconductors, NL
5:00 New Analysis Method for Coupled-Field Micro Devices
M. Motiee, A. Khajepour and R.R. Mansour, University of Waterloo, CA
5:20 Frequency Domain Modeling of SAW Devices
W.C. Wilson and G.M. Atkinson, NASA Langley Research Center, US
5:40 Modeling and Dynamics of Coupled Dome-shaped Micromechanical Oscillators
T. Sahai and A.T. Zehnder, Cornell University, US
 

Tuesday May 22

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7:00 TUESDAY - RegistrationMain Lobby
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10:30 WCM: Bulk MOS intrinsic/interface modelsGrand Ballroom A
 Session chair: Mitiko Miura-Mattausch, Hiroshima University, Japan
10:30 A History of Electronic Traps on Silicon Surfaces and Interfaces
C-T Sah, B.B. Jie and Z. Chen, University of Florida, US
11:00 High Conentration of Interface Traps in MOS Transistor Modeling
Z. Chen, B.B. Jie and C-T Sah, Xiamen University, CN
11:30 Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts
B.B. Jie and C-T Sah, Peking University, CN
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1:30 MEMS/NEMS: Simulation & Co-SimulationGrand Ballroom F
 Session chair: Cy Wilson, NASA, US
1:30 Optimization of Masks for High Aspect Ration UV-Lithographic Patterning
U. Triltsch and S. Büttgenbach, Technische Universität Braunschweig, DE
1:50 A Study on the Electrical Properties of Plasma Nitrided Oxide Gate Dielectric in Flash Memory
M. Park, K. Suh, S. Lee, H. Kang, K. Kim and K. Kim, Samsung Electronics, KR
2:10 A Method for Semi-Automated Modeling of Analog-Mixed Signal Systems in Automotive Applications based on Transient Simulation Data
H. Mielenz, R. Doelling and W. Rosenstiel, Robert Bosch Group, DE
2:30 Genetic Algorithm for the Design of Microchip Flow Cytometers
H. Bang, W.G. Lee, H. Yun, J.K. Min, C. Chung, J.K. Chang and D.-C. Han, Seoul National University, KR
2:50 FEM Simulation for demolding process in thermal imprint lithography
Z. Song, J. Lee and S. Park, Louisiana State University, US
3:10 Study of Thermal Efficiency Optimization in a Twin-bubble MEMS Micro-injector
H-K Tang, F-C Tseng, W.W. Wang, I-Y Lee, C-K Lee and K. Lee, BenQ Corporation, TW
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4:00 WCM: Double/multiple-gate MOS modelsGrand Ballroom A
 Session chair: Tor Fjeldly, Norwegian University of Science and Technology, Norway
4:00 A PSP based scalable compact FinFET model
G.D.J. Smit, A.J. Scholten, N. Serra, R.M.T. Pijper, R. van Langevelde, A. Mercha, G. Gildenblat and D.B.M. Klaassen, NXP Semiconductors, NL
4:30 A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs
A. Ortiz-Conde and F.J. García Sánchez, Simón Bolívar University, VE
5:00 Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs
B. Yu, H. Lu, W-Y Lu and Y. Taur, UCSD, US
5:30 Unified Compact Model for Generic Double-Gate MOSFETs
X. Zhou, G.H. See, G.J. Zhu, K. Chandrasekaran, Z.M. Zhu, S.C. Rustagi, S.H. Lin, C.Q. Wei and G.H. Lim, Nanyang Technological University, SG
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4:00 Poster Session 1 (4:00 - 6:00) & Expo ReceptionExhibit Hall
 

Wednesday May 23

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8:30 Keynotes: Micro & Nano Fluidics - Sponsored by KodakGrand Ballroom F
 Session chair: Daniel Attinger, Columbia University, US
8:30 Multiphase Microfluidics: From Tailor-Made Nanomaterials to Microflows Near the Speed of Sound
A. Guenther, University of Toronto, CA (bio)
9:15 The microfluidics of cilia motion: developmental biology, respiratory mechanics and beyond
Y. Ventikos, University of Oxford, UK (bio)
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8:30 WCM: Atomic/numerical-based modelsGrand Ballroom A
 Session chair: Josef Watts, IBM, USA
8:30 Nanoscale Physics for Compact Models
M. Lundstrom and H. Pal, Purdue University, US
9:00 Carbon Nanotube Transistor Compact Model
J. Deng, G.C. Wan and H.-S. Wong, Stanford University, US
9:30 Modeling of FET Flicker Noise and Impact of Technology Scaling
C.-Y. Chen, Y. Liu, S. Cao, R. Dutton, J. Sato-Iwanaga, A. Inoue and H. Sorada, Stanford University, US
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10:30 Micro & Nano Fluidics: Nano Fluidic Devices - Sponsored by KodakGrand Ballroom F
 Session chair: Ed Furlani, Eastman Kodak, US
10:30 Overview: Micro & Nano Fluidics (invited overview presentation)
D. Attinger, Columbia University, US (bio)
11:00 Fabrication of 1D nanochannels with thin glass wafers for single molecule studies
H. Hoang, I. Segers-Nolten, N. Tas, M. de Boer, V. Subramaniam and M. Elwenspoek, Mesa+ Institute for Nanotechnology, NL
11:20 Nanoparticle transport through carbon nanopipes
M. Whitby and N. Quirke, Imperial College, UK
11:40 Functional Nanoplumbing for DNA analysis
R. Riehn, R. Staunton, S.F. Lim, W.W. Reisner and R.H. Austin, North Carolina State University, US
12:00 Gated Chemical Transport and Enhance Flow through Carbon Nanotube Membranes
M. Majumder and B. Hinds, Univ. KY, US
12:20 Nanodroplet Impact on Liquid Substrates via Molecular Dynamics
D. Lussier, N.M.P. Kakalis and Y. Ventikos, University of Oxford, UK
12:40 A Targeted Nanotechnology-based Therapeutic System for the Combined Chemoprevention of Colon Cancer
S. Prabhu and N. Kanthamneni, College of Pharmacy, Western University of Health Sciences, US
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10:30 WCM: Statistical/process-based modelsGrand Ballroom A
 Session chair: Carlos Galup-Montoro, Universidade Federal de Santa Catarina, Brazil
10:30 Modeling MOSFET Process Variation using PSP
J.S. Watts, Y-M Lee and J-E Park, IBM, US
11:00 Modeling Process Variations Using a Compact Model
R. Murali and J.D. Meindl, Georgia Tech, US
11:20 Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types
J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik, IBM, US
11:40 Optimal Skew Corners for Compact Models
N. Lu, IBM, US
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1:30 WCM: SOI/double-gate/high-voltage modelsGrand Ballroom A
 Session chair: Keith Green, Texas Instruments, USA
1:30 Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits
Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel, Advanced Micro Devices, US
1:50 Compact modeling of drain current in Independently Driven Double-Gate MOSFETs
D. Munteanu, J.L. Autran, X. Loussier and O. Tintori, L2MP-CNRS, FR
2:10 Explicit Short Channel Compact Model of Independent Double Gate Mosfet
M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah, CEA-LETI, FR
2:30 A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs
R. Salazar, A. Ortiz-Conde and F.J. García Sánchez, Solid State Electronics Laboratory, VE
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2:00 Nanotech Poster Session 2 - Expo Reception (2:00 - 4:00)Exhibit Hall
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4:00 WCM : Poster Briefing 1Grand Ballroom A
 Session chair: Brian Q. Chen, AMD, USA
4:00 A charge based compact flicker noise model including short channel effects
A.S. Roy and C.C. Enz, EPFL, CH
4:05 HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications
M. Miyake, N. Sadachika, K. Matsumoto, D. Navarro, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi and S. Miyamoto, Hiroshima University, JP
4:10 PTAT voltage generator based on an MOS voltage divider
C. Rossi, C. Galup-Montoro and M.C. Schneider, Universidad de la Republica, UY
4:15 LINFET: A BSIM class FET model with smooth derivatives at Vds=0
L. Wagner and C.M. Olsen, IBM Systems Technology Group, US
4:20 Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs
C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha, Universidade Federal da Bahia - UFBA, BR
4:25 A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
J. He, W. Bian, Y. Tao, B. Li and Y. Chen, Peking University, CN
4:30 An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs
J. He, F. Liu, W. Bian, Y. Tao, W. Wu, K. Lu, T. Wang and M. Chan, Peking University, CN
4:35 Body Bias Dependency of Substrate Current and Its Modeling for SOI Devices
Y. Ma, M-C Jeng and Z. Liu, Cadence Design System, Inc., US
4:40 Compact Models for Asymmetric Double Gate MOSFETs
H.C. Morris, H. Abebe and E.C. Cumberbatch, San Jose State University, US
4:45 Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model
T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, S. O’uchi and H. Koike, AIST, JP
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5:10 WCM : Poster Briefing 2Grand Ballroom A
 Session chair: Mansun Chan, Hong Kong University of Science and Technology, Hong Kong
5:10 An Efficient Sectionalized Modeling Approach for Introduction of
V. Milovanovic and S. Mijalkovic, Delft University of Technology, NL
5:15 A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range
H. Klimach, C. Galup-Montoro and M.C. Schneider, Federal University of Santa Catarina, BR
5:20 An Approximate Explicit Solution to General Diode Equation
J. He, Y. Tao, C. Yang, M. Feng, B. Li, W. Bian and Y. Chen, Peking University, CN
5:25 Methodology and Design Kit Integration of a Broadband Compact Inductor Model
M. Erturk, R. Groves and E. Gordon, IBM, US
5:30 A Compact Model for Temperature and Frequency Dependence of Spiral Inductor
Y.Z. Xu and J.T. Watt, Altera Corporation, US
5:35 SPICE Modeling of Hook Shaped Idsat Curve for I/O 2.5V MOS Transistors
P.B.Y. Tan, A.V. Kordesch and O. Sidek, Silterra Malaysia Sdn. Bhd., MY
5:40 HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations
Y. Iino and I. Pesic, Silvaco Japan, JP
5:45 Process Aware Hybrid SPICE Models using TCAD and Silicon Data
Y. Mahotin, S. Tirumala, X. Lin and D. Pramanik, Synopsys Inc., US
5:50 Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs
K. Horio, Shibaura Institute of Technology, JP
5:55 A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
B.C. Paul, R. Tu, S. Fujita, M. Okajima, T. Lee and Y. Nishi, Toshiba America Research, US
6:00 Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors
J.M. Lopez-Gonzalez, Universitat Politecnica de Catalunya, ES
 

Thursday May 24

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8:00 WCM: Special OverviewGrand Ballroom A
 Session chair: Colin McAndrew, Freescale Semiconductor, USA
8:00 Monolithic Concept and the Inventions of Integrated Circuits by Kilby and Noyce
A.N. Saxena, Rensselaer International Science Company, US
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8:30 WCM: Interconnect/parasitic/process modelsGrand Ballroom A
 Session chair: Jamal Deen, McMaster University, Canada
8:30 RCL Modeling and characterization of X Architecture Diagonal lines for Sub-100nm SoC design
N. Arora, Cadence Design System, Inc., US
9:00 Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs
M. Chan and W. Wu, HKUST, HK
9:30 Analysis of Halo Implanted MOSFETs.
C.C. McAndrew and P.G. Drennan, Freescale Semiconductor, US
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10:30 Micro & Nano Fluidics: Design & SimulationGrand Ballroom G
 Session chair: Cy Wilson, NASA, US
10:30 A Rapid Prototyping and Mass-Production Platform of Microfluidic Devices
P. Craig Kung, Y.L. Kung, D. Holcombe, R.H. Grace, G. Ungelenk, E. Piechotka and W. Seiferth, Optotrack, Inc., US
10:50 Numerical Analysis of Nonlinear Deformation and Breakup of Slender Microjets with Application to Continuous Inkjet Printing
E.P. Furlani, Eastman Kodak Company, US
11:10 Drop formation mechanisms in piezo-acoustic inkjet
H.M.A. Wijshoff, Océ Technologies B.V., NL
11:30 Numerical Simulation of Droplet Generation Mode Transition of Co-flowing Liquids in Micro-channel
J.S. Hua, M. Cheng and T.G. Liu, Institute of High Performance Computing, SG
11:50 Multi-physics Simulational Analysis of a Novel PCR Micro-Device
Y. Wang, K. Pant, J. Grover and S. Sundaram, CFD Research Corporation, US
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10:30 ICCN: Softnano: Multi-scale Modeling of Soft Nanostructured MaterialsGrand Ballroom F
 Session chair: Wolfgang Windl, Ohio State University, US
10:30 Multi-scale Modeling of Soft Nanostructured Materials (invited overview presentation)
F. Case, Case Scientific & NSTI, US (bio)
10:50 Effects of chain architecture, composition and local stiffness on the controlled assembly and morphology of polymeric blends and composites
M. Makowski, PPG Industries, US (bio)
11:20 Multiscale Modeling of Polymer-Grafted Nanoparticles
G.D. Smith, University of Utah, US
11:40 Molecular Simulation and Theory for Nanosystems
R.J. Sadus, Swinburne University of Technology, AU
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10:30 WCM: FET/HBT modelsGrand Ballroom A
 Session chair: Narain Arora, Cadence Design Systems, USA
10:30 Modeling the electrical characteristics of FET-type sensors for biomedical applications
M.J. Deen and M.W. Shinwari, McMaster University, CA
11:00 Non-standard geometry scaling effects
M. Schröter and S. Lehmann, Technische Universität Dresden, DE
11:30 Theory of source-drain partitioning in MOSFET
A.S. Roy, C.C. Enz and J.M Sallese, EPFL, CH
11:50 Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models
G.H. See, X. Zhou, K. Chandrasekaran, S.B. Chiah, Z.M. Zhu, G.H. Lim, C.Q. Wei, S.H. Lin and G.J. Zhu, Nanyang Technological University, SG
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1:30 Micro & Nano Fluidics: Devices 1Grand Ballroom G
 Session chair: Daniel Attinger, Columbia University, US
1:30 A Microfluidic Array with Micro Cell Sieves for Cell Cytotoxicity Screening
Z.H. Wang, M.C. Kim, M. Marquez and T. Thorsen, Massachusetts Institute of Technology, US
1:50 Development of Immunoassay Microfluidic Chip Using Serial-flow Method
J. Hsieh, H-L Yin, Y-C Huang, H-H Hsu, Y-S Lin and T-T Huang, Instrument Technology Research Center, TW
2:10 A method for the highly parallel analysis of gene expression of single cells
W.R.A. Meuleman, N. Milner, D.W.K. Lueerssen and E.M. Southern, Oxford Gene Technology, UK
2:30 Microfluidic Cell Culture System for Live Cell Imaging
M.J. Powell, L.K. Higashi, A.A. Cabasug, S.M. Giffin and R.K. Alley, Nanopoint Inc., US
2:50 Bubble-based actuation schemes for microfluididic chips
J. Xu, M. Dhur and D. Attinger, Columbia University, US
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1:30 ICCN: Modeling Zeolites, Surfaces and Surface ProcessesGrand Ballroom F
 Session chair: Wolfgang Windl, Ohio State University, US
1:30 Interaction of DNA with Single-Walled Carbon Nanotubes: Implication to the Bio-Sensors
K-J Kong, H. Chang and J-O Lee, Korea Research Institute of Chemical Technology, KR
1:50 A Kinetic Study of the MOCVD of GaN
D. Moscatelli and C. Cavallotti, Politecnico di Milano, IT
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2:10 ICCN: Softnano: Multi-scale Modeling of Soft Nanostructured MaterialsGrand Ballroom F
 Session chair: Dmitry Bedrov, University of Utah, US
2:10 A Multiscale investigation of the influence of surface morphology on thin films CVD deposition
A. Barbato, M. Rondanini and C. Cavallotti, Politecnico di Milano, IT
2:30 Bridging Domain Multiscale Method
S.P. Xiao and W.Y. Hou, The University of Iowa, US
2:50 Atomistic-Continuum Simulations of Carbon Nanotubes in LIquids
P. Koumoutsakos, E. Kotsalis, J.H. Walther and A. Dupuis, ETH Zurich, CH
 

Announcement and Call for Participation

The largest gathering in the field worldwide, MSM is the premier technical forum for presenting the latest research and development in design, modeling and simulation methods, tools and applications in the MEMS, microelectronic, semiconductor, sensor, materials and biotechnology fields.

The Nanotech 2007 Meeting, MSM & ICCN Conferences, and the WCM workshop will be held at the Santa Clara Convention Center, Santa Clara, California, U.S.A., in the heart of the silicon valley.

The conference Technical Proceedings, consisting of articles submitted by authors of both oral and poster presentations will, be distributed to participants at registration.

In addition to the Technical Program, an exciting series of Social Events are being prepared to allow attendees ample opportunity to interact socially and enjoy the sights and sounds of the venue.

Objectives

The goal of MSM is to bring together researchers, designers, programmers and vendors involved in microsystem developments (MEMS microelectronic, semiconductor, sensor, materials and biotechnology fields). In an effort to dramatically shorten development time and reduce prototyping costs, simulation activities have experienced phenomenal growth, generating a large number of point solutions, as well as integrated tools.

MSM provides a forum for microsystem simulation specialists, allowing them to be exposed to the state of the art modeling techniques currently implemented in academic or industrial research, encouraging a free exchange of ideas and generating synergies between adjacent specialties. Finally, MSM strives to help advanced modeling techniques diffuse into industry and research centers by organizing workshops, demonstrations and short courses.

Topics and Application Areas

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Topics:

  • Mathematical Modeling and Scaling Laws
  • Numerical Methods
  • Finite and Boundary Element Methods
  • Process, Device and Circuit Simulation
  • Model Calibration, Validation and Metrology
  • Equipment Modeling
  • Co-simulation and Optimization
  • System and Multi-level Modeling
  • Characterization and Reliability
  • Data Bases, Data Exchange and Translators

Application Areas:

  • Semiconductors and Microelectronics
  • Quantum Effects, Quantum Devices and Spintronics
  • Advanced Packaging and Interconnects
  • Micro Electro Mechanical Systems (MEMS)
  • Smart Sensors and Structures
  • Advanced Lithography and Photonics
  • Biotechnology
  • Genomics & Proteomics
  • Microfluidics & Lab on Chip
  • High Throughput Screening
  • Point of Care Diagnostics
  • Electromagnetics, RF, Compact Modeling and Signal Integrity
  • Artificial Intelligence and Expert Systems
  • CAD/CAE/CAM

Conference Organization

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Technical Program Chairs

Matthew Laudon, NSTI, USA
Bart Romanowicz, NSTI, USA

Microsystems Chair

Narayan R. Aluru, University of Illinois Urbana-Champaign, USA

Semiconductor Chair

Andreas Wild, Freescale Semiconductor, USA

Program Committee

Xavier J. R. Avula, Washington University, USA
Stephen F. Bart, Bose Corporation, USA
Bum-Kyoo Choi, Sogang University, Korea
Bernard Courtois, TIMA-CMP, France
Peter Cousseau, Honeywell, USA
Robert W. Dutton, Stanford University, USA
Gary K. Fedder, Carnegie Mellon University, USA
David K. Ferry, Arizona State University, USA
Toshio Fukuda, Nagoya University, Japan
Elena Gaura, Coventry University, UK
Steffen Hardt, Leibniz Universität Hannover, Germany
Andreas Hieke, Ciphergen Biosystems, Inc., USA
Eberhard P. Hofer, University of Ulm, Germany
Charles H. Hsu, MaxiMEM Limited, USA
Michael Judy, Analog Devices, USA
Yozo Kanda, Toyo University, Japan
Jan G. Korvink, University of Freiburg, Germany
Anantha Krishnan, Defense Advanced Research Projects Agency, USA
Mark E. Law, University of Florida, USA
Mary-Ann Maher, SoftMEMS, USA
Kazunori Matsuda, Tokushima Bunri University, Japan
Chris Menzel, Nano Science and Technology Institute, USA
Tamal Mukherjee, Carnegie Mellon University, USA
Andrzej Napieralski, Technical University of Lodz, Poland
Ruth Pachter, Air Force Research Laboratory, USA
Michael G. Pecht, University of Maryland, USA
Marcel D. Profirescu, Technical University of Bucharest, Romania
PVM Rao, IIT Delhi, India
Philippe Renaud, Swiss Federal Institute of Technology of Lausanne, Switzerland
Marta Rencz, Technical University of Budapest, Hungary
Siegried Selberherr, Technical University of Vienna, Austria
Sudhama Shastri, ON Semiconductor, USA
Armin Sulzmann, Daimler-Chrysler, Germany
Mathew Varghese, The Charles Stark Draper Laboratory, Inc., USA
Dragica Vasilesca, Arizona State University, USA
Gerhard Wachutka, Technical University of Münich, Germany
Jacob White, Massachusetts Institute of Technology, USA
Thomas Wiegele, BF Goodrich Aerospace, USA
Wenjing Ye, Georgia Institute of Technology, USA
Sung-Kie Youn, Korea Advanced Institute of Science and Technology, Korea
Xing Zhou, Nanyang Technological University, Singapore

Conference Operations Manager

Sarah Wenning, Nano Science and Technology Institute, USA

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Joint Electronics and Microsystems Symposia

Reflecting the rapid growth of the Micro and Nano systems fields and the commitment and success of the respective research communities, the Electronics and Microsystems suite of symposia at Nanotech 2007 has evolved into a premier annual event in the Micro and Nano technologies arena.

The MEMS & NEMS , Sensors & Systems , Micro & Nano Fluidics and MSM - Modeling Microsystems symposia will jointly provide a whole and comprehensive forum for a multidisciplinary community, with presentations and topics for discussion ranging from theoretical developments through design and fabrication to industry-oriented applications.

Smarter and smaller and ever more complex systems are being dreamt of, which combine micro and nano system technologies with intelligence, power supply and communication ability, at the same physical scale. Such integrated systems are to be primarily component based and, both the whole and the composites subject to a variety of trends. The increasing systems complexity and multidisciplinary pose strong challenges to the engineers involved in the modelling and fabrication of micro and nanosystems, electronics and wireless communication domains. The Microsystems and Electronics strand will provide valuable networking and interaction opportunities by successfully bringing together the four Symposia above.

World-class researchers in several focused topics of MEMS and NEMS will present their latest research results, allowing cross-disciplinary exchange of knowledge to further advance both technological areas. MEMS is naturally continuing its downsizing into Nanoelectromechanical Systems but at the same time it is indispensable in constructing complete Nano devices and systems. MEMS and Nanotechnology are becoming highly complimentary technologies that will significantly impact various large industries across the globe.

Journal Submissions

Sensors & Transducers

On-line Magazine ‘Sensors & Transducers’ (S&T e-Digest)

Selected proceedings papers in the Electronics and Microsystems Track (MEMS & NEMS, Sensors & Systems, Micro & Nano Fluidics symposia, and MSM conference) will be reviewed and invited into a Special Issue of the on-line magazine ‘Sensors & Transducers’ (S&T e-Digest).

For consideration into this Special Issue of the on-line magazine ‘Sensors & Transducers’, please select the “Submit to ‘Sensors & Transducers’ (S&T e-Digest)” button during the on-line submission procedure.

In Association with

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WCM 2007 2007 Workshop on Compact Modeling
WCM 2007
BioNano 2007 2007 NSTI Bio Nano Conference and Trade Show
BioNano 2007
ICCN 2007 2007 International Conference on Computational Nanoscience and Nanotechnology
ICCN 2007
ICCN 2007 2007 NSTI Nanotechnology Conference and Trade Show
Nanotech 2007
Program Announcement Topics Organization Events
 
 

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This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.